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1 Ergebnisse
1
Temperature Characteristics of 10nm N- and P-Channel Si-Fin..:
, In:
2022 International Conference on Electrical Engineering, Computer and Information Technology (ICEECIT)
,
Hashim, Yasir
- p. 104-107 , 2022
Link:
https://doi.org/10.1109/ICEECIT55908.2022.10030376
RT T1 <cTitle>2022 International Conference on Electrical Engineering, Computer and Information Technology (ICEECIT)</cTitle>: T1 <Title>Temperature Characteristics of 10nm N- and P-Channel Si-FinFET Structure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10030376&Exemplar=1&LAN=DE A1 Hashim, Yasir YR 2022 K1 Temperature sensors K1 Electrical engineering K1 Temperature distribution K1 Sensitivity K1 Field effect transistors K1 Current-voltage characteristics K1 Voltage K1 FinFET K1 MOSFET K1 temperature K1 nano K1 transistor SP 104 OP 107 LK http://dx.doi.org/https://doi.org/10.1109/ICEECIT55908.2022.10030376 DO https://doi.org/10.1109/ICEECIT55908.2022.10030376 SF ELIB - SuUB Bremen
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