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1 Ergebnisse
1
Analog and RF Performance Analysis of SiO2/HfO2 Dual Dielec..:
, In:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
,
Dewangan, Ram Krishna
;
Kumar Singh, Vinay
;
Khan, Mohammad Rafique
- p. 178-183 , 2022
Link:
https://doi.org/10.1109/EDKCON56221.2022.10032848
RT T1 <cTitle>2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)</cTitle>: T1 <Title>Analog and RF Performance Analysis of SiO2/HfO2 Dual Dielectric Gate All Around Vertically Stacked Nanosheet FET for 5nm Technology Node</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10032848&Exemplar=1&LAN=DE A1 Dewangan, Ram Krishna A1 Kumar Singh, Vinay A1 Khan, Mohammad Rafique YR 2022 K1 Cutoff frequency K1 Field effect transistors K1 Logic gates K1 FinFETs K1 Nanoscale devices K1 Dielectrics K1 Leakage currents K1 Analog and RF figure of merit K1 Field Effect Transistor K1 Gate all around K1 High-K dielectric K1 Nanosheet SP 178 OP 183 LK http://dx.doi.org/https://doi.org/10.1109/EDKCON56221.2022.10032848 DO https://doi.org/10.1109/EDKCON56221.2022.10032848 SF ELIB - SuUB Bremen
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