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Influence of total ionizing dose on LWM Bulk and SOI p-FinF..:
, In:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
,
Ray, Abhishek
;
Naugarhiya, Alok
;
Mishra, Guru Prasad
- p. 421-425 , 2022
Link:
https://doi.org/10.1109/EDKCON56221.2022.10032853
RT T1 <cTitle>2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)</cTitle>: T1 <Title>Influence of total ionizing dose on LWM Bulk and SOI p-FinFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10032853&Exemplar=1&LAN=DE A1 Ray, Abhishek A1 Naugarhiya, Alok A1 Mishra, Guru Prasad YR 2022 K1 Performance evaluation K1 Integrated circuits K1 Modulation K1 Metals K1 Logic gates K1 Threshold voltage K1 Total ionizing dose K1 Total ionizing dose effects (TID) K1 Threshold voltage (Vth) K1 FinFET K1 Workfunction K1 Multigate SP 421 OP 425 LK http://dx.doi.org/https://doi.org/10.1109/EDKCON56221.2022.10032853 DO https://doi.org/10.1109/EDKCON56221.2022.10032853 SF ELIB - SuUB Bremen
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