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1 Ergebnisse
1
Electrical Noise Analysis of Gate-on-Source Tunnel Field Ef..:
, In:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
,
Chander, Sweta
;
Sinha, Sanjeet Kumar
- p. 307-311 , 2022
Link:
https://doi.org/10.1109/EDKCON56221.2022.10032931
RT T1 <cTitle>2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)</cTitle>: T1 <Title>Electrical Noise Analysis of Gate-on-Source Tunnel Field Effect Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10032931&Exemplar=1&LAN=DE A1 Chander, Sweta A1 Sinha, Sanjeet Kumar YR 2022 K1 Performance evaluation K1 TFETs K1 Logic gates K1 Heterojunctions K1 Germanium K1 Capacitance K1 Leakage currents K1 Threshold Voltage K1 Gate-on-source (GoS) K1 Sub-threshold slope (SS) K1 Band-to-band-tunneling (BTBT) K1 Electrical noise analysis SP 307 OP 311 LK http://dx.doi.org/https://doi.org/10.1109/EDKCON56221.2022.10032931 DO https://doi.org/10.1109/EDKCON56221.2022.10032931 SF ELIB - SuUB Bremen
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