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1 Ergebnisse
1
Impact of Gate engineering on Analog, RF Performance of Nan..:
, In:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
,
Jena, Pradipta Kumar
;
Khuntia, Prasantakumar
;
Baral, Biswajit
. - p. 646-649 , 2022
Link:
https://doi.org/10.1109/EDKCON56221.2022.10032938
RT T1 <cTitle>2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)</cTitle>: T1 <Title>Impact of Gate engineering on Analog, RF Performance of Nanoscale Barriered TM-Heterostructure DG-MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10032938&Exemplar=1&LAN=DE A1 Jena, Pradipta Kumar A1 Khuntia, Prasantakumar A1 Baral, Biswajit A1 Pati, Sudhansu Kumar YR 2022 K1 Performance evaluation K1 Radio frequency K1 MOSFET K1 Analytical models K1 Cutoff frequency K1 Linearity K1 Logic gates K1 Transconductance (gm) K1 Intrinsic Gain K1 Transconductance Generation Factor K1 Cut off frequency(fT) K1 maximum oscillation frequency (fmax) SP 646 OP 649 LK http://dx.doi.org/https://doi.org/10.1109/EDKCON56221.2022.10032938 DO https://doi.org/10.1109/EDKCON56221.2022.10032938 SF ELIB - SuUB Bremen
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