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1 Ergebnisse
1
III-V Heterostucture Transistor with Underlap: A Comparitiv..:
, In:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
,
Khuntia, Prasantakumar
;
Baral, Biswajit
;
Biswal, Sudhansu Mohan
. - p. 338-343 , 2022
Link:
https://doi.org/10.1109/EDKCON56221.2022.10032956
RT T1 <cTitle>2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)</cTitle>: T1 <Title>III-V Heterostucture Transistor with Underlap: A Comparitive Study and Performance Investigation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10032956&Exemplar=1&LAN=DE A1 Khuntia, Prasantakumar A1 Baral, Biswajit A1 Biswal, Sudhansu Mohan A1 Pati, Sudhansu Kumar YR 2022 K1 Performance evaluation K1 Radio frequency K1 Fabrication K1 MOSFET K1 Cutoff frequency K1 Logic gates K1 Indium gallium arsenide K1 Transconductance Generation Factor K1 Transconductance (gm) K1 Cut off frequency(fT) K1 maximum cutoff frequency(fmax) SP 338 OP 343 LK http://dx.doi.org/https://doi.org/10.1109/EDKCON56221.2022.10032956 DO https://doi.org/10.1109/EDKCON56221.2022.10032956 SF ELIB - SuUB Bremen
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