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1 Ergebnisse
1
HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance:
, In:
2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)
,
Raja, P. Vigneshwara
;
Nallatamby, Jean-Christophe
;
Bouslama, Mohamed
... - p. 1-4 , 2022
Link:
https://doi.org/10.1109/NEMO51452.2022.10038964
RT T1
2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)
: T1
HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance
UL https://suche.suub.uni-bremen.de/peid=ieee-10038964&Exemplar=1&LAN=DE A1 Raja, P. Vigneshwara A1 Nallatamby, Jean-Christophe A1 Bouslama, Mohamed A1 Jacquet, Jean Claude A1 Sommet, Raphael A1 Chang, Christophe A1 Lambert, Benoit YR 2022 K1 Schottky diodes K1 HEMTs K1 Logic gates K1 Aging K1 Wide band gap semiconductors K1 Discrete cosine transforms K1 MODFETs K1 AlGaN/GaN HEMT K1 trap K1 gate leakage K1 HTRB K1 power drift K1 reliability SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/NEMO51452.2022.10038964 DO https://doi.org/10.1109/NEMO51452.2022.10038964 SF ELIB - SuUB Bremen
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