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1 Ergebnisse
1
ESD-ability Analysis of High Voltage nLDMOSs with the Drain..:
, In:
2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE)
,
Chung, Yu-Jie
;
Chen, Shen-Li
;
Mai, Xing-Chen
.. - p. 151-153 , 2022
Link:
https://doi.org/10.1109/ECICE55674.2022.10042875
RT T1 <cTitle>2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE)</cTitle>: T1 <Title>ESD-ability Analysis of High Voltage nLDMOSs with the Drain-side Parasitic Schottky/Embedded STI</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10042875&Exemplar=1&LAN=DE A1 Chung, Yu-Jie A1 Chen, Shen-Li A1 Mai, Xing-Chen A1 Lin, Ting-En A1 Yang, Xiu-Yuan YR 2022 K1 Heating systems K1 Performance evaluation K1 Temperature K1 Thermal resistance K1 Modulation K1 Resists K1 High-voltage techniques K1 ESD capability K1 nLDMOS K1 Schottky K1 Shallow Trench Isolation (STI) K1 Technology Computer Aided Design (TCAD) SP 151 OP 153 LK http://dx.doi.org/https://doi.org/10.1109/ECICE55674.2022.10042875 DO https://doi.org/10.1109/ECICE55674.2022.10042875 SF ELIB - SuUB Bremen
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