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SLCFET Amplifier Performance Improvements Using an ALD TiN ..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),

Vasen, Timothy ; Novak, Brian ; Scimonelli, Marc... - p. 120-123 , 2022

Link: https://doi.org/10.1109/BCICTS53451.2022.10051706

RT 
T1 <cTitle>2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)</cTitle>: T1 <Title>SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10051706&Exemplar=1&LAN=DE
				
A1 Vasen, Timothy
A1 Novak, Brian
A1 Scimonelli, Marc
A1 Frey, Kevin
A1 Saad, Mustapha
A1 Saia, Abbey
A1 Grisafe, Benjamin
A1 Nagamatsu, Ken A.
A1 Chang, Josephine
A1 Wheeler, Virginia
A1 Hobart, Karl
A1 Koehler, Andrew D.
A1 Shea, Patrick
A1 Campen, Stephen Van
A1 Howell, Robert S.
A1 Afroz, Shamima
YR 2022
SN 2831-4999
K1 Radio frequency
K1 Performance evaluation
K1 Resistance
K1 Logic gates
K1 Tin
K1 Capacitance
K1 Wide band gap semiconductors
K1 SLCFET
K1 power amplifiers
K1 low noise amplifiers
K1 RF switch
K1 superlattice
K1 AlGaN/GaN
K1 HEMT
SP 120
OP 123
LK http://dx.doi.org/https://doi.org/10.1109/BCICTS53451.2022.10051706
DO https://doi.org/10.1109/BCICTS53451.2022.10051706
SF ELIB - SuUB Bremen

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