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1 Ergebnisse
1
A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE..:
, In:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
,
Jyo, Teruo
;
Hamada, Hiroshi
;
Nagatani, Munehiko
... - p. 152-155 , 2022
Link:
https://doi.org/10.1109/BCICTS53451.2022.10051755
RT T1
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
: T1
A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT
UL https://suche.suub.uni-bremen.de/peid=ieee-10051755&Exemplar=1&LAN=DE A1 Jyo, Teruo A1 Hamada, Hiroshi A1 Nagatani, Munehiko A1 Wakita, Hitoshi A1 Abdo, Ibrahim A1 Mutoh, Miwa A1 Shiratori, Yuta A1 Okada, Kenichi A1 Shirane, Atsushi A1 Takahashi, Hiroyuki YR 2022 SN 2831-4999 K1 Power combiners K1 Power amplifiers K1 Optimization methods K1 Bandwidth K1 DH-HEMTs K1 III-V semiconductor materials K1 Through-silicon vias K1 power amplifiers K1 terahertz K1 InP DHBT K1 combiner SP 152 OP 155 LK http://dx.doi.org/https://doi.org/10.1109/BCICTS53451.2022.10051755 DO https://doi.org/10.1109/BCICTS53451.2022.10051755 SF ELIB - SuUB Bremen
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