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1 Ergebnisse
1
A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 30..:
, In:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
,
Yu, Qiang
;
Thomson, Derek
;
Then, Han Wui
... - p. 144-147 , 2022
Link:
https://doi.org/10.1109/BCICTS53451.2022.10051762
RT T1 <cTitle>2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)</cTitle>: T1 <Title>A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10051762&Exemplar=1&LAN=DE A1 Yu, Qiang A1 Thomson, Derek A1 Then, Han Wui A1 Latorre-Rey, Alvaro A1 Radosavljevic, Marko A1 Beumer, Michael A1 Koirala, Pratik A1 Thomas, Nicole A1 Nair, Nityan A1 Vora, Heli A1 Bader, Samuel A1 Rami, Said YR 2022 SN 2831-4999 K1 Radio frequency K1 Integrated circuits K1 Design methodology K1 Power amplifiers K1 Bandwidth K1 Voltage K1 Couplers K1 power amplifiers K1 Gallium nitride K1 broadband amplifiers K1 HEMTs K1 radio frequency integrated circuits K1 MMICs SP 144 OP 147 LK http://dx.doi.org/https://doi.org/10.1109/BCICTS53451.2022.10051762 DO https://doi.org/10.1109/BCICTS53451.2022.10051762 SF ELIB - SuUB Bremen
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