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28.7 A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accu..:

, In: 2023 IEEE International Solid-State Circuits Conference (ISSCC),

Kwon, Daehyun ; Jeong, Heon Su ; Choi, Jaemin... - p. 27-29 , 2023

Link: https://doi.org/10.1109/ISSCC42615.2023.10067651

RT 
T1 <cTitle>2023 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>28.7 A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10067651&Exemplar=1&LAN=DE
				
A1 Kwon, Daehyun
A1 Jeong, Heon Su
A1 Choi, Jaemin
A1 Kim, Wijong
A1 Kim, Jae Woong
A1 Yoon, Junsub
A1 Choi, Jungmin
A1 Lee, Sanguk
A1 Rie, Hyunsub Norbert
A1 Lee, Jin-il
A1 Lee, Jongbum
A1 Jang, Taeseong
A1 Kim, JunHyung
A1 Kang, Sanghee
A1 Shin, Jungbum
A1 Loh, Yanggyoon
A1 Lee, Chang Yong
A1 Woo, Junmyung
A1 Yu, Hyeseung
A1 Bae, Changhyun
A1 Oh, Reum
A1 Sohn, Young-soo
A1 Yoo, Changsik
A1 Lee, Jooyoung
YR 2023
SN 2376-8606
K1 Negative bias temperature instability
K1 Charge pumps
K1 Sensitivity
K1 Power demand
K1 Transmitters
K1 Thermal variables control
K1 Low-pass filters
SP 27
OP 29
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC42615.2023.10067651
DO https://doi.org/10.1109/ISSCC42615.2023.10067651
SF ELIB - SuUB Bremen

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