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Research on the technique of accurately measuring thermal r..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Liu, Ao
;
Zhang, Guobin
;
Liu, Tao
... - p. 30-33 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007092
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Research on the technique of accurately measuring thermal resistance of SiC MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10070926&Exemplar=1&LAN=DE A1 Liu, Ao A1 Zhang, Guobin A1 Liu, Tao A1 Li, Shaohong A1 Zhang, Teng A1 Huang, Runhua A1 Bai, Song A1 Xu, Shen A1 Sun, Weifeng YR 2023 K1 MOSFET K1 Silicon carbide K1 Thermal resistance K1 Logic gates K1 Threshold voltage K1 Thermal analysis K1 Thermal stresses SP 30 OP 33 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070926 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070926 SF ELIB - SuUB Bremen
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