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1 Ergebnisse
1
Analysis on abnormal forward conduction properties in GaN b..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Zhang, Qi
;
Wu, Qianshu
;
Wang, Yapeng
... - p. 82-86 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007092
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Analysis on abnormal forward conduction properties in GaN based JBS diode by TCAD simulation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10070928&Exemplar=1&LAN=DE A1 Zhang, Qi A1 Wu, Qianshu A1 Wang, Yapeng A1 Qiu, Qiuling A1 Liu, Zhenxing A1 Zhang, Jinwei A1 Li, Chenglang A1 Zhou, Yuhao A1 Liu, Yang YR 2023 K1 Schottky diodes K1 Electric potential K1 Photonic band gap K1 Simulation K1 Schottky barriers K1 Metals K1 Voltage SP 82 OP 86 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070928 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070928 SF ELIB - SuUB Bremen
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