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1 Ergebnisse
1
Reduction of threading screw dislocations in 4H-SiC crystal..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Hu, Guojie
;
Zhong, Guanglei
;
Yang, Xianglong
... - p. 140-142 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007095
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10070954&Exemplar=1&LAN=DE A1 Hu, Guojie A1 Zhong, Guanglei A1 Yang, Xianglong A1 Chen, Xiufang A1 Xie, Xuejian A1 Yu, Guojian A1 Hu, Xiaobo A1 Xu, Xiangang YR 2023 K1 Atomic force microscopy K1 Silicon carbide K1 Photonic band gap K1 Stacking K1 Surface morphology K1 Morphology K1 Crystals SP 140 OP 142 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070954 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070954 SF ELIB - SuUB Bremen
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