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1
A decrease in TDDB Lifetime of Commercial SiC power MOSFETs..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Yang, Sheng
;
Feng, Haonan
;
Yu, Xuefeng
. - p. 38-42 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007097
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>A decrease in TDDB Lifetime of Commercial SiC power MOSFETs Under Repetitive Unclamped Inductive Switching Stresses</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10070979&Exemplar=1&LAN=DE A1 Yang, Sheng A1 Feng, Haonan A1 Yu, Xuefeng A1 Lin, Xinnan YR 2023 K1 Degradation K1 Resistance K1 Silicon carbide K1 Switches K1 Logic gates K1 Hot carriers K1 Threshold voltage SP 38 OP 42 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070979 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070979 SF ELIB - SuUB Bremen
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