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1 Ergebnisse
1
Epitaxial lateral overgrowth of GaN using hexagonal pattern..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Tao, Jiahao
;
Xu, Yu
;
Li, Jianjie
... - p. 151-154 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007104
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Epitaxial lateral overgrowth of GaN using hexagonal patterned PECVD and wet transferred graphene masks by MOCVD</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10071045&Exemplar=1&LAN=DE A1 Tao, Jiahao A1 Xu, Yu A1 Li, Jianjie A1 Cai, Xin A1 Wang, Yuning A1 Wang, Guobin A1 Cao, Bing A1 Xu, Ke YR 2023 K1 Photonic band gap K1 Graphene K1 Crystals K1 Epitaxial growth K1 Behavioral sciences K1 Plasmas K1 Organic chemicals SP 151 OP 154 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071045 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071045 SF ELIB - SuUB Bremen
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