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1 Ergebnisse
1
Study on High-Linearity Devices Based on Double-Channel AlG..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Li, Ang
;
Wang, Chong
;
Zheng, Xuefeng
... - p. 104-106 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007109
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10071092&Exemplar=1&LAN=DE A1 Li, Ang A1 Wang, Chong A1 Zheng, Xuefeng A1 Ma, Xiaohua A1 He, Yunlong A1 Liu, Kai A1 Zhao, Yaopeng A1 Hao, Yue YR 2023 K1 Radio frequency K1 Photonic band gap K1 Simulation K1 Cutoff frequency K1 Linearity K1 Logic gates K1 FinFETs SP 104 OP 106 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071092 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071092 SF ELIB - SuUB Bremen
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