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1 Ergebnisse
1
Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Yao, Yixu
;
Jiang, Qimeng
;
Huang, Sen
... - p. 87-91 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007110
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced by Bulk/Interface States in SiNx Passivation Dielectric</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10071109&Exemplar=1&LAN=DE A1 Yao, Yixu A1 Jiang, Qimeng A1 Huang, Sen A1 Wang, Xinhua A1 Jin, Hao A1 Dai, Xinyue A1 Fan, Jie A1 Yin, Haibo A1 Wei, Ke A1 Liu, Xinyu YR 2023 K1 Semiconductor device measurement K1 Voltage measurement K1 Capacitance-voltage characteristics K1 Switches K1 Logic gates K1 Dielectric measurement K1 Dielectrics SP 87 OP 91 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071109 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071109 SF ELIB - SuUB Bremen
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