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1 Ergebnisse
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Electrical characterization of HfO2/4H-SiC and HfO2/Si MOS ..:
, In:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
,
Wang, Xi-Rui
;
Zhang, Jie
;
Ma, Hong-Ping
. - p. 34-37 , 2023
Link:
https://doi.org/10.1109/SSLChinaIFWS57942.2023.1007112
RT T1 <cTitle>2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)</cTitle>: T1 <Title>Electrical characterization of HfO2/4H-SiC and HfO2/Si MOS structures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10071123&Exemplar=1&LAN=DE A1 Wang, Xi-Rui A1 Zhang, Jie A1 Ma, Hong-Ping A1 Zhang, Qing-Chun YR 2023 K1 Silicon carbide K1 Capacitance-voltage characteristics K1 MOS capacitors K1 Logic gates K1 Silicon K1 Hafnium compounds K1 Dielectrics K1 High-k dieletric K1 atomic layer deposition (ALD) K1 current-voltage (I-V) K1 capacitance-voltage (C-V) K1 interfacial defect density (Dit) SP 34 OP 37 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071123 DO https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071123 SF ELIB - SuUB Bremen
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