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1 Ergebnisse
1
Comparative study on characteristics of GaN-based MIS-HEMTs..:
, In:
2023 35th International Conference on Microelectronic Test Structure (ICMTS)
,
Wu, Pei-Yu
;
Tsai, Xin-Ying
;
Chang, Ting-Chang
.. - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICMTS55420.2023.10094072
RT T1 <cTitle>2023 35th International Conference on Microelectronic Test Structure (ICMTS)</cTitle>: T1 <Title>Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10094072&Exemplar=1&LAN=DE A1 Wu, Pei-Yu A1 Tsai, Xin-Ying A1 Chang, Ting-Chang A1 Tsai, Tsung-Ming A1 Sze, Simon M. YR 2023 SN 2158-1029 K1 Degradation K1 Analytical models K1 HEMTs K1 Logic gates K1 Insulators K1 Reliability engineering K1 Ions K1 power devices K1 metal-insulator-semiconductorhigh electron mobility transistors (MIS-HEMTs) K1 impact ionization K1 Al2O3/Si3N4 insulator MIS-HEMTs SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICMTS55420.2023.10094072 DO https://doi.org/10.1109/ICMTS55420.2023.10094072 SF ELIB - SuUB Bremen
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