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1 Ergebnisse
1
Analysis of Critical Schottky Distance Effect and Distribut..:
, In:
2023 35th International Conference on Microelectronic Test Structure (ICMTS)
,
Lin, Shih-Kai
;
Chang, Ting-Chang
;
Huang, Wei-Chen
.. - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICMTS55420.2023.10094175
RT T1 <cTitle>2023 35th International Conference on Microelectronic Test Structure (ICMTS)</cTitle>: T1 <Title>Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10094175&Exemplar=1&LAN=DE A1 Lin, Shih-Kai A1 Chang, Ting-Chang A1 Huang, Wei-Chen A1 Tan, Yung-Fang A1 Lien, Chen-Hsin YR 2023 SN 2158-1029 K1 Resistance K1 Correlation K1 Schottky barriers K1 Fitting K1 Random access memory K1 Switches K1 Voltage K1 Resistive Random Access Memory (RRAM) K1 onetransistor- one-resistor (1T-1R) K1 HfO2 K1 Schottky Distance SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICMTS55420.2023.10094175 DO https://doi.org/10.1109/ICMTS55420.2023.10094175 SF ELIB - SuUB Bremen
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