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1 Ergebnisse
1
Development of MFMIS Gatestack with Thick Hafnium Zirconium..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Kang, Bohyeon
;
Park, Jongseo
;
Hwang, Junghyeon
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10102929
RT T1 <cTitle>2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10102929&Exemplar=1&LAN=DE A1 Kang, Bohyeon A1 Park, Jongseo A1 Hwang, Junghyeon A1 Lee, Sangho A1 Shin, Hunbeom A1 An, Jehyun A1 You, Hyunseo A1 Ahn, Sung-Min A1 Jeon, Sanghun A1 Baek, Rock-Hyun YR 2023 K1 Silicon compounds K1 Zirconium K1 Nonvolatile memory K1 RNA K1 Hafnium K1 Logic gates K1 Tin K1 thick HZO K1 gate K1 memory K1 integration K1 memory window K1 etching SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10102929 DO https://doi.org/10.1109/EDTM55494.2023.10102929 SF ELIB - SuUB Bremen
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