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1 Ergebnisse
1
WSe2 Field-effect Transistor with Electron-beam-induced W-s..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Andreev, Maksim
;
Kang, Juncheol
;
Lee, Taeran
. - p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10103021
RT T1 <cTitle>2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>WSe2 Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10103021&Exemplar=1&LAN=DE A1 Andreev, Maksim A1 Kang, Juncheol A1 Lee, Taeran A1 Park, Jin-Hong YR 2023 K1 Electron beams K1 Field effect transistors K1 Metals K1 Logic gates K1 Conductivity K1 Multivalued logic K1 Manufacturing K1 multi-valued logic K1 ternary logic K1 transition metal dichalcogenides K1 WSe2 K1 electron beam K1 ambipolar conductivity SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10103021 DO https://doi.org/10.1109/EDTM55494.2023.10103021 SF ELIB - SuUB Bremen
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