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1 Ergebnisse
1
3D NAND Memory Operation of Oxide-Semiconductor Channel FeF..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Hao, Junxiang
;
Mei, Xiaoran
;
Saraya, Takuya
.. - p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10103035
RT T1 <cTitle>2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>3D NAND Memory Operation of Oxide-Semiconductor Channel FeFETs and the Potential Impact of In-Plane Polarization</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10103035&Exemplar=1&LAN=DE A1 Hao, Junxiang A1 Mei, Xiaoran A1 Saraya, Takuya A1 Hiramoto, Toshiro A1 Kobayashi, Masaharu YR 2023 K1 Solid modeling K1 Electric potential K1 Three-dimensional displays K1 Voltage K1 Interference K1 Manufacturing K1 FeFETs K1 FeFET K1 HfO2-based ferroelectric K1 Oxide Semiconductor K1 3D NAND SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10103035 DO https://doi.org/10.1109/EDTM55494.2023.10103035 SF ELIB - SuUB Bremen
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