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1 Ergebnisse
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A new back-to-back graded AlGaN barrier for complementary i..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Zhou, Jinggui
;
Do, Huy-Binh
;
De Souza, Maria Merlyne
- p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10103055
RT T1
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
: T1
A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform
UL https://suche.suub.uni-bremen.de/peid=ieee-10103055&Exemplar=1&LAN=DE A1 Zhou, Jinggui A1 Do, Huy-Binh A1 De Souza, Maria Merlyne YR 2023 K1 Performance evaluation K1 Low voltage K1 Three-dimensional displays K1 Voltage K1 Logic gates K1 Wide band gap semiconductors K1 Manufacturing K1 GaN/AlGaN/GaN K1 back-to-back graded AlGaN K1 complementary integration K1 n-channel K1 p-channel K1 breakdown voltage SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10103055 DO https://doi.org/10.1109/EDTM55494.2023.10103055 SF ELIB - SuUB Bremen
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