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1 Ergebnisse
1
Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for..:
, In:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Huang, Hsien-Chih
;
Ren, Zhongjie
;
Anhar Uddin Bhuiyan, A F M
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/EDTM55494.2023.10103115
RT T1 <cTitle>2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10103115&Exemplar=1&LAN=DE A1 Huang, Hsien-Chih A1 Ren, Zhongjie A1 Anhar Uddin Bhuiyan, A F M A1 Feng, Zixuan A1 Luo, Xixi A1 Huang, Alex Q. A1 Zhao, Hongping A1 Li, Xiuling YR 2023 K1 Geometry K1 Technological innovation K1 FinFETs K1 Market research K1 Etching K1 Plasmas K1 Manufacturing K1 $\upbeta-\text{Ga}_{2}\mathrm{O}_{3}$ K1 MacEtch and FinFET SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM55494.2023.10103115 DO https://doi.org/10.1109/EDTM55494.2023.10103115 SF ELIB - SuUB Bremen
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