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1 Ergebnisse
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Gate leakage mechanisms of AlN/GaN High electron mobility t..:
, In:
2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
,
Qin, Lingjie
;
Zhu, Jiejie
;
Liu, Siyu
... - p. 1-3 , 2022
Link:
https://doi.org/10.1109/IMWS-AMP54652.2022.10107116
RT T1
2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
: T1
Gate leakage mechanisms of AlN/GaN High electron mobility transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-10107116&Exemplar=1&LAN=DE A1 Qin, Lingjie A1 Zhu, Jiejie A1 Liu, Siyu A1 Guo, Jingshu A1 Zhang, Bowen A1 Zhou, Yuxi A1 Qiu, Tianze A1 Ma, Xiaohua YR 2022 SN 2694-2992 K1 Radio frequency K1 Temperature dependence K1 Temperature K1 Thermionic emission K1 Logic gates K1 HEMTs K1 Gate leakage K1 different temperature K1 PF emission K1 thermionic emission (TE) K1 AlN / GaN HEMT SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/IMWS-AMP54652.2022.10107116 DO https://doi.org/10.1109/IMWS-AMP54652.2022.10107116 SF ELIB - SuUB Bremen
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