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Gate leakage mechanisms of AlN/GaN High electron mobility t..:

, In: 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP),
Qin, Lingjie ; Zhu, Jiejie ; Liu, Siyu... - p. 1-3 , 2022
Link: https://doi.org/10.1109/IMWS-AMP54652.2022.10107116