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1 Ergebnisse
1
Improved Linearity Performance at High Operation Voltage on..:
, In:
2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
,
Wang, Pengfei
;
Mi, Minhan
;
Chen, Zhihong
... - p. 1-3 , 2022
Link:
https://doi.org/10.1109/IMWS-AMP54652.2022.10107233
RT T1 <cTitle>2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)</cTitle>: T1 <Title>Improved Linearity Performance at High Operation Voltage on Dual-threshold Coupling AlGaN/GaN HEMTs by Modulating the Duty Ratio</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10107233&Exemplar=1&LAN=DE A1 Wang, Pengfei A1 Mi, Minhan A1 Chen, Zhihong A1 An, Sirui A1 Zhou, Yuwei A1 Du, Xiang A1 Ma, Xiaohua A1 Hao, Yue YR 2022 SN 2694-2992 K1 Couplings K1 Performance evaluation K1 Linearity K1 Voltage K1 HEMTs K1 Logic gates K1 Wide band gap semiconductors K1 High linearity K1 AlGaN/GaN HEMT K1 Dual-threshold coupling technique K1 High electric field SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/IMWS-AMP54652.2022.10107233 DO https://doi.org/10.1109/IMWS-AMP54652.2022.10107233 SF ELIB - SuUB Bremen
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