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1 Ergebnisse
1
A Concise Electrothermal Model to Characterize the Thermal ..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Lee, Jian-Hsing
;
Lin, Gong-Kai
;
Chen, Chun-Chih
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117633
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117633&Exemplar=1&LAN=DE A1 Lee, Jian-Hsing A1 Lin, Gong-Kai A1 Chen, Chun-Chih A1 Chen, Li-Fan A1 Wang, Chien-Wei A1 Huang, Shao-Chang A1 Li, Ching-Ho A1 Liao, Chih-Cherng A1 Chuang, Jung-Tsun A1 Chen, Ke-Horng YR 2023 SN 1938-1891 K1 Temperature measurement K1 Power measurement K1 Power demand K1 Area measurement K1 Power transistors K1 Reliability engineering K1 Time measurement K1 Electrothermal (ETO) K1 Joule-heating K1 Power Transistor K1 Thermal Safe-Operating Area (TSOA) K1 Thermal Runaway SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117633 DO https://doi.org/10.1109/IRPS48203.2023.10117633 SF ELIB - SuUB Bremen
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