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1 Ergebnisse
1
High- Temperature PBTI in Trench-Gate Vertical GaN Power MO..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Favero, D.
;
Cavaliere, A.
;
De Santi, C.
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117667
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117667&Exemplar=1&LAN=DE A1 Favero, D. A1 Cavaliere, A. A1 De Santi, C. A1 Borga, M. A1 Filho, W. Goncalez A1 Geens, K. A1 Bakeroot, B. A1 Decoutere, S. A1 Meneghesso, G. A1 Zanoni, E. A1 Meneghini, M. YR 2023 SN 1938-1891 K1 Electron traps K1 Temperature distribution K1 MOSFET K1 Gallium K1 Logic gates K1 Tunneling K1 Market research K1 GaN-on-Si K1 trench gate MOSFET K1 vertical GaN K1 Reliability K1 PBTI SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117667 DO https://doi.org/10.1109/IRPS48203.2023.10117667 SF ELIB - SuUB Bremen
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