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Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB C..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Van Brunt, E. ; Lichtenwalner, D. J. ; Park, J. H... - p. 1-4 , 2023
Link: https://doi.org/10.1109/IRPS48203.2023.10117702