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1 Ergebnisse
1
Influence of Back Gate Bias on the Hot Carrier Reliability ..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Zhang, Xinyi
;
Wang, Kewei
;
Wang, Fang
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117718
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117718&Exemplar=1&LAN=DE A1 Zhang, Xinyi A1 Wang, Kewei A1 Wang, Fang A1 Li, Jiangjiang A1 Wu, Zhicheng A1 Li, Duoli A1 Li, Bo A1 Bu, Jianhui A1 Han, Zhengsheng YR 2023 SN 1938-1891 K1 Degradation K1 Simulation K1 Hot carriers K1 MOSFET circuits K1 Logic gates K1 Threshold voltage K1 Interface states K1 hot carrier reliability K1 DSOI K1 back gate bias K1 hot electron induced punch-through effect (HEIP) SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117718 DO https://doi.org/10.1109/IRPS48203.2023.10117718 SF ELIB - SuUB Bremen
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