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1 Ergebnisse
1
The Concept of Safe Operating Area for Gate Dielectrics: th..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Moens, P.
;
Geenen, F.
;
De Schepper, L.
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117802
RT T1
2023 IEEE International Reliability Physics Symposium (IRPS)
: T1
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study
UL https://suche.suub.uni-bremen.de/peid=ieee-10117802&Exemplar=1&LAN=DE A1 Moens, P. A1 Geenen, F. A1 De Schepper, L. A1 Cano, JF A1 Lettens, J. A1 Maslougkas, S. A1 Franchi, J. A1 Domeij, M. YR 2023 SN 1938-1891 K1 Semiconductor device modeling K1 MOSFET K1 Temperature dependence K1 Silicon carbide K1 Logic gates K1 Dielectrics K1 Transistors K1 Lifetime K1 Safe Operating Area K1 SiC K1 TDDB SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117802 DO https://doi.org/10.1109/IRPS48203.2023.10117802 SF ELIB - SuUB Bremen
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