I agree that this site is using cookies. You can find further informations
here
.
X
Login
Merkliste (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
zur Desktop-Version
Toggle navigation
Merkliste
1 Ergebnisse
1
Impact of gate stack processing on the hysteresis of 300 mm..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Panarella, L.
;
Kaczer, B.
;
Smets, Q.
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117803
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117803&Exemplar=1&LAN=DE A1 Panarella, L. A1 Kaczer, B. A1 Smets, Q. A1 Verreck, D. A1 Schram, T. A1 Cott, D. A1 Lin, D. A1 Tyaginov, S. A1 Asselberghs, I. A1 de la Rosa, C. Lockhart A1 Kar, G. S. A1 Afanas'ev, V. YR 2023 SN 1938-1891 K1 Atmospheric measurements K1 Field effect transistors K1 Energy measurement K1 Materials reliability K1 Logic gates K1 Reliability engineering K1 Particle measurements K1 2D materials K1 high-k gate dielectrics K1 nanoelectronics K1 reliability engineering K1 semiconductor device reliability SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117803 DO https://doi.org/10.1109/IRPS48203.2023.10117803 SF ELIB - SuUB Bremen
Export
RefWorks (nur Desktop-Version!)
Flow
(Zuerst in
Flow
einloggen, dann importieren)
