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Insights into device and material origins and physical mech..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Pesic, Milan
;
Beltrando, Bastien
;
Rollo, Tommaso
... - p. 1-8 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117898
RT T1
2023 IEEE International Reliability Physics Symposium (IRPS)
: T1
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND
UL https://suche.suub.uni-bremen.de/peid=ieee-10117898&Exemplar=1&LAN=DE A1 Pesic, Milan A1 Beltrando, Bastien A1 Rollo, Tommaso A1 Zambelli, Cristian A1 Padovani, Andrea A1 Micheloni, Rino A1 Maji, Rita A1 Enman, Lisa A1 Saly, Mark A1 Bae, Yang Ho A1 Kim, Jung Bae A1 Yim, Dong Kil A1 Larcher, Luca YR 2023 SN 1938-1891 K1 Temperature measurement K1 Semiconductor device measurement K1 Three-dimensional displays K1 Temperature K1 Limiting K1 Focusing K1 Minimization K1 3D NAND K1 Retention K1 T -Cross K1 Flash K1 Storage SP 1 OP 8 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117898 DO https://doi.org/10.1109/IRPS48203.2023.10117898 SF ELIB - SuUB Bremen
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