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1 Ergebnisse
1
Localized thermal effects in Gate-all-around devices:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Landon, Colin
;
Jiang, Lei
;
Pantuso, Daniel
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117903
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Localized thermal effects in Gate-all-around devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117903&Exemplar=1&LAN=DE A1 Landon, Colin A1 Jiang, Lei A1 Pantuso, Daniel A1 Meric, Inanc A1 Komeyli, Kam A1 Hicks, Jeffrey A1 Schroeder, Daniel YR 2023 SN 1938-1891 K1 Performance evaluation K1 Temperature distribution K1 Thermal resistance K1 Gallium arsenide K1 Logic gates K1 Thermal management K1 Nanoscale devices K1 Nanowires K1 self-heat K1 transistor K1 gate-all-around K1 reliability SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117903 DO https://doi.org/10.1109/IRPS48203.2023.10117903 SF ELIB - SuUB Bremen
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