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Backside Failure Analysis of IGBT power devices assembled i..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Vitanza, E.
;
Realmuto, C.
;
La Marca, M.
. - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117973
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Backside Failure Analysis of IGBT power devices assembled in STPAK</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117973&Exemplar=1&LAN=DE A1 Vitanza, E. A1 Realmuto, C. A1 La Marca, M. A1 Torrisi, L. YR 2023 SN 1938-1891 K1 Insulated gate bipolar transistors K1 Wet etching K1 Surface discharges K1 Semiconductor device reliability K1 Failure analysis K1 Fault location K1 Silicon K1 Backside fault localization K1 Insulated Gate Bipolar Transistor (IGBT) device K1 Sample preparation SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117973 DO https://doi.org/10.1109/IRPS48203.2023.10117973 SF ELIB - SuUB Bremen
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