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1
Reliability Studies on Advanced FinFET Transistors of the I..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Jamil, M.
;
Mukhopadhay, S.
;
Ghoneim, M.
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117992
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117992&Exemplar=1&LAN=DE A1 Jamil, M. A1 Mukhopadhay, S. A1 Ghoneim, M. A1 Shailos, A. A1 Prasad, C. A1 Meric, I. A1 Ramey, S. YR 2023 SN 1938-1891 K1 Semiconductor device modeling K1 Measurement K1 Moore's Law K1 Materials reliability K1 Performance gain K1 CMOS technology K1 FinFETs K1 High-k K1 reliability K1 oxide breakdown K1 hot carrier injection K1 bias temperature instability SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117992 DO https://doi.org/10.1109/IRPS48203.2023.10117992 SF ELIB - SuUB Bremen
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