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1 Ergebnisse
1
Reliability Comparison of Commercial Planar and Trench 4H-S..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Zhu, Shengnan
;
Shi, Limeng
;
Jin, Michael
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10117998
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10117998&Exemplar=1&LAN=DE A1 Zhu, Shengnan A1 Shi, Limeng A1 Jin, Michael A1 Qian, Jiashu A1 Bhattacharya, Monikuntala A1 Rao Maddi, Hema Lata A1 White, Marvin H. A1 Agarwal, Anant K. A1 Liu, Tianshi A1 Shimbori, Atsushi A1 Chen, Chingchi YR 2023 SN 1938-1891 K1 MOSFET K1 Voltage measurement K1 Power measurement K1 Silicon carbide K1 Logic gates K1 Dielectric measurement K1 Threshold voltage K1 SiC MOSFET K1 planar and trench K1 gate oxide reliability K1 threshold voltage shift K1 short-circuit capability SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10117998 DO https://doi.org/10.1109/IRPS48203.2023.10117998 SF ELIB - SuUB Bremen
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