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Reliability issues of gate oxides and $p-n$ junctions for v..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Narita, Tetsuo ; Kikuta, Daigo ; Ito, Kenji... - p. 1-10 , 2023

Link: https://doi.org/10.1109/IRPS48203.2023.10118047

RT 
T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10118047&Exemplar=1&LAN=DE
				
A1 Narita, Tetsuo
A1 Kikuta, Daigo
A1 Ito, Kenji
A1 Shoji, Tomoyuki
A1 Mori, Tomohiko
A1 Yamaguchi, Satoshi
A1 Kimoto, Yasuji
A1 Tomita, Kazuyoshi
A1 Kanechika, Masakazu
A1 Kondo, Takeshi
A1 Uesugi, Tsutomu
A1 Kojima, Jun
A1 Suda, Jun
A1 Nagasato, Yoshitaka
A1 Ikeda, Satoshi
A1 Watanabe, Hiroki
A1 Kosaki, Masayoshi
A1 Oka, Tohru
YR 2023
SN 1938-1891
K1 MOSFET
K1 Logic gates
K1 Tunneling
K1 Reliability
K1 Transistors
K1 Integrated circuit reliability
K1 Thermal stability
K1 MOSFET power amplifiers
K1 Dielectric breakdown
K1 Semiconductor defects
K1 Stress measurement
K1 Semiconductor device reliability
SP 1
OP 10
LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10118047
DO https://doi.org/10.1109/IRPS48203.2023.10118047
SF ELIB - SuUB Bremen

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