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1 Ergebnisse
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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Vandendaele, W.
;
Leurquin, C.
;
Lavieville, R.
... - p. 1-8 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10118180
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10118180&Exemplar=1&LAN=DE A1 Vandendaele, W. A1 Leurquin, C. A1 Lavieville, R. A1 Jaud, M.A A1 Viey, A.G. A1 Gwoziecki, R. A1 Mohamad, B. A1 Nowak, E. A1 Constant, A. A1 Iucolano, F. YR 2023 SN 1938-1891 K1 Three-dimensional displays K1 Semiconductor device reliability K1 Logic gates K1 Threshold voltage K1 Silicon K1 Epitaxial growth K1 Topology K1 HV-BTI K1 TDDB K1 GaN MOSc-HEMT K1 Vth instability K1 GaN on Si SP 1 OP 8 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10118180 DO https://doi.org/10.1109/IRPS48203.2023.10118180 SF ELIB - SuUB Bremen
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