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1 Ergebnisse
1
Silicon based degradation model for various types of highly..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Thiessen, A.
;
Haack, M.
;
Herklotz, M.
- p. 1-5 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10118209
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Silicon based degradation model for various types of highly integrated MOL resistor devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10118209&Exemplar=1&LAN=DE A1 Thiessen, A. A1 Haack, M. A1 Herklotz, M. YR 2023 SN 1938-1891 K1 Resistors K1 Degradation K1 Silicon K1 Nickel K1 Data models K1 Kinetic theory K1 Behavioral sciences K1 polysilicon K1 resistor K1 degradation model K1 resistance drift K1 power-law K1 reliability SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10118209 DO https://doi.org/10.1109/IRPS48203.2023.10118209 SF ELIB - SuUB Bremen
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