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Investigating Nanowire, Nanosheet and Forksheet FET Hot-Car..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Vandemaele, Michiel ; Kaczer, Ben ; Bury, Erik... - p. 1-10 , 2023

Link: https://doi.org/10.1109/IRPS48203.2023.10118211

RT 
T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10118211&Exemplar=1&LAN=DE
				
A1 Vandemaele, Michiel
A1 Kaczer, Ben
A1 Bury, Erik
A1 Franco, Jacopo
A1 Chasin, Adrian
A1 Makarov, Alexander
A1 Mertens, Hans
A1 Hellings, Geert
A1 Groeseneken, Guido
YR 2023
SN 1938-1891
K1 Temperature measurement
K1 Field effect transistors
K1 Simulated annealing
K1 Hot carriers
K1 Mathematical models
K1 Dielectric measurement
K1 Numerical models
K1 Border traps
K1 carrier energy distribution function
K1 forksheet FETs
K1 gate-all-around FETs
K1 hot-carrier degra-dation
K1 interface defects
K1 nanosheet FETs
K1 nanowire FETs
K1 non-equilibrium BTI
K1 non-radiative multiphonon model
K1 recovery
K1 Si-R bond
K1 simulations
K1 TCAD
SP 1
OP 10
LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10118211
DO https://doi.org/10.1109/IRPS48203.2023.10118211
SF ELIB - SuUB Bremen

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