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1 Ergebnisse
1
Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFE..:
, In:
2023 IEEE International Reliability Physics Symposium (IRPS)
,
Ke, Chao-Yang
;
Tsui, Yu-Chia
;
Tsui, Bing-Yue
. - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IRPS48203.2023.10118299
RT T1 <cTitle>2023 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test Methods</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10118299&Exemplar=1&LAN=DE A1 Ke, Chao-Yang A1 Tsui, Yu-Chia A1 Tsui, Bing-Yue A1 Ker, Ming-Dou YR 2023 SN 1938-1891 K1 Resistance K1 MOSFET K1 Voltage measurement K1 Silicon carbide K1 Multichip modules K1 Switches K1 Transient analysis K1 Safe operating area (SOA) K1 transmission line pulse (TLP) K1 unclamped inductive switching (UIS) K1 SiC K1 VDMOSFET K1 snapback SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48203.2023.10118299 DO https://doi.org/10.1109/IRPS48203.2023.10118299 SF ELIB - SuUB Bremen
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