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1
Temperature Dependent Large-Signal Modeling of GaN HEMTs at..:
, In:
2023 IEEE Wireless and Microwave Technology Conference (WAMICON)
,
Miller, Nicholas C.
;
Brown, Alexis
;
Elliott, Michael
. - p. 21-24 , 2023
Link:
https://doi.org/10.1109/WAMICON57636.2023.10124913
RT T1 <cTitle>2023 IEEE Wireless and Microwave Technology Conference (WAMICON)</cTitle>: T1 <Title>Temperature Dependent Large-Signal Modeling of GaN HEMTs at Ka-Band using the ASM-HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10124913&Exemplar=1&LAN=DE A1 Miller, Nicholas C. A1 Brown, Alexis A1 Elliott, Michael A1 Gilbert, Ryan YR 2023 K1 Temperature measurement K1 Wireless communication K1 Temperature dependence K1 HEMTs K1 Time measurement K1 Microwave transistors K1 Integrated circuit modeling K1 Gallium nitride K1 high electron mobility transistor K1 nonlinear modeling K1 ASM-HEMT K1 high temperature SP 21 OP 24 LK http://dx.doi.org/https://doi.org/10.1109/WAMICON57636.2023.10124913 DO https://doi.org/10.1109/WAMICON57636.2023.10124913 SF ELIB - SuUB Bremen
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