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1 Ergebnisse
1
Field Effect Depletion Regions exploiting different Qox pol..:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Moulin, M.
;
Fache, T.
;
Rack, M.
... - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1 <cTitle>2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)</cTitle>: T1 <Title>Field Effect Depletion Regions exploiting different Qox polarities for Interface Passivation in High-Resistivity Silicon Substrates</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10133956&Exemplar=1&LAN=DE A1 Moulin, M. A1 Fache, T. A1 Rack, M. A1 Plantier, C. A1 Lugo, J. A1 Hutin, L. A1 Raskin, J.-P. YR 2023 K1 Surface waves K1 Conductivity K1 Very large scale integration K1 Silicon K1 Dielectrics K1 Coplanar waveguides K1 Quality of experience SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133956 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133956 SF ELIB - SuUB Bremen
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