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1 Ergebnisse
1
A Kinetic Monte Carlo Simulation Study of WS2RRAM with Diff..:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Chen, Ying-Chuan
;
Chao, Yu-Ting
;
Chen, Edward
.. - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1 <cTitle>2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)</cTitle>: T1 <Title>A Kinetic Monte Carlo Simulation Study of WS2RRAM with Different 2D Layer Thickness</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10134133&Exemplar=1&LAN=DE A1 Chen, Ying-Chuan A1 Chao, Yu-Ting A1 Chen, Edward A1 Wu, Chao-Hsin A1 Wu, Yuh-Renn YR 2023 K1 Monte Carlo methods K1 Predictive models K1 Very large scale integration K1 Ions K1 Data models K1 Threshold voltage K1 Calibration K1 WS2 RRAM K1 KMC K1 activation energy K1 retention time K1 breakdown electric field SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134133 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134133 SF ELIB - SuUB Bremen
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