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Fabrication of Low-Power RRAM for Stateful Hyperdimensional..:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Dubreuil, T.
;
Barraud, S.
;
Previtali, B.
... - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1 <cTitle>2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)</cTitle>: T1 <Title>Fabrication of Low-Power RRAM for Stateful Hyperdimensional Computing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10134182&Exemplar=1&LAN=DE A1 Dubreuil, T. A1 Barraud, S. A1 Previtali, B. A1 Martinie, S. A1 Lacord, J. A1 Martin, S. A1 Castellani, N. A1 Anotta, A. A1 Andrieu, F. YR 2023 K1 Fabrication K1 Resistive RAM K1 Field effect transistors K1 Switches K1 Very large scale integration K1 Parallel processing K1 SPICE SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134182 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134182 SF ELIB - SuUB Bremen
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