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1 Ergebnisse
1
Investigation of Hydrogen Diffusion in Top Gate IGZO TFTs b..:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Chen, Yu-An
;
Chang, Ting-Chang
;
Chien, Ya-Ting
.. - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1 <cTitle>2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)</cTitle>: T1 <Title>Investigation of Hydrogen Diffusion in Top Gate IGZO TFTs by Using Various Pulse-Width Operation Method and Capacitance-Voltage Analysis</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10134281&Exemplar=1&LAN=DE A1 Chen, Yu-An A1 Chang, Ting-Chang A1 Chien, Ya-Ting A1 Lee, Po-Yi A1 Shao, Kui-You YR 2023 K1 Degradation K1 Capacitance-voltage characteristics K1 Hydrogen K1 Very large scale integration K1 Thermal conductivity K1 Market research K1 Threshold voltage SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134281 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134281 SF ELIB - SuUB Bremen
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